用于7 Ghz应用的高效低失真GaN MMIC功率放大器

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI:10.1109/MIKON.2016.7492010

R. Giofré, P. Colantonio, F. Giannini

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引用次数: 2

摘要

提出了设计高效、低失真的两级氮化镓功率放大器的指导原则。特别是，在不影响效率和增益特性的情况下，采用该方法设计了基于TriQuint公司0.25µm GaN工艺的7GHz PA。对连续波信号进行测试时，该放大器的饱和输出功率高于37 dBm，效率大于60%，AM/AM和AM/PM失真分别低于2 dB和±1度。MMIC芯片尺寸为3×3mm2。

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High efficiency and low distortion GaN MMIC power amplifier for 7 Ghz applications

The guidelines for designing a high efficiency and low distortion 2-stages Gallium Nitride (GaN) power amplifier (PA) are presented. In particular, the developed approach to mitigate the phase distortion (AM/PM) without worsening the efficiency and gain features is adopted to design a 7GHz PA based on 0.25 µm GaN process from TriQuint. When tested with continuous wave signals the PA shows a saturated output power higher than 37 dBm, with an efficiency larger than 60% and an AM/AM and AM/PM distortions lower than 2 dB and ±1 deg, respectively. The MMIC chip size is 3×3mm2.

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2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

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