用背面发射显微镜识别工艺缺陷

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 1900-01-01 DOI:10.1109/IPFA.1997.638219

Chun-Sheng Liu, Charng-E Peng, Chen-Chung Hsu

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摘要

随着CMOS规模的迅速缩小，准确和精确地诊断ULSI电路中的工艺故障机制变得更加困难和耗时。本文提出了一种利用背面发射显微技术对ULSI工艺缺陷进行失效分析的新方法。该方法可以准确地检测出金属层下缺陷部位的真实位置。

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Identification of process defects using back side emission microscopy

As the CMOS is scaling down quickly, the accurate and precise diagnosis of the process failure mechanisms in the ULSI circuits becomes more difficult and time consuming. In this paper, a new failure analysis technique for ULSI process defects using the back side emission microscopy is proposed. The real location of the defect site under the metal layer can be detected exactly by this new technique.

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Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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