Keonhee Cho, Gi-Kryang Kim, J. Oh, Kiryong Kim, Changsu Sim, Younmee Bae, Mijung Kim, Sangyeop Baeck, T. Song, Seong-ook Jung
{"title":"具有低功耗应用的电荷回收和电荷自保存技术的14nm低压SRAM","authors":"Keonhee Cho, Gi-Kryang Kim, J. Oh, Kiryong Kim, Changsu Sim, Younmee Bae, Mijung Kim, Sangyeop Baeck, T. Song, Seong-ook Jung","doi":"10.1109/vlsitechnologyandcir46769.2022.9830353","DOIUrl":null,"url":null,"abstract":"This paper presents charge-recycling and charge self-saving techniques in SRAM that lower V<inf>MIN</inf> while consuming minimal read and write energies. The proposed techniques (with flying CV<inf>SS</inf>) achieve 250mV (270mV) V<inf>MIN</inf> improvements in 64-Kb SRAM using 0.080μm<sup>2</sup> LV SRAM cell on 14-nm FinFET technology.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 14-nm Low Voltage SRAM with Charge-Recycling and Charge Self-Saving Techniques for Low-Power Applications\",\"authors\":\"Keonhee Cho, Gi-Kryang Kim, J. Oh, Kiryong Kim, Changsu Sim, Younmee Bae, Mijung Kim, Sangyeop Baeck, T. Song, Seong-ook Jung\",\"doi\":\"10.1109/vlsitechnologyandcir46769.2022.9830353\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents charge-recycling and charge self-saving techniques in SRAM that lower V<inf>MIN</inf> while consuming minimal read and write energies. The proposed techniques (with flying CV<inf>SS</inf>) achieve 250mV (270mV) V<inf>MIN</inf> improvements in 64-Kb SRAM using 0.080μm<sup>2</sup> LV SRAM cell on 14-nm FinFET technology.\",\"PeriodicalId\":332454,\"journal\":{\"name\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830353\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 14-nm Low Voltage SRAM with Charge-Recycling and Charge Self-Saving Techniques for Low-Power Applications
This paper presents charge-recycling and charge self-saving techniques in SRAM that lower VMIN while consuming minimal read and write energies. The proposed techniques (with flying CVSS) achieve 250mV (270mV) VMIN improvements in 64-Kb SRAM using 0.080μm2 LV SRAM cell on 14-nm FinFET technology.
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