D. Greenlaw, G. Burbach, T. Feudel, F. Feustel, K. Frohberg, F. Graetsch, G. Grasshoff, C. Hartig, T. Heller, K. Hempel, M. Horstmann, P. Huebler, R. Kirsch, S. Kruegel, E. Langer, A. Pawlowitsch, H. Ruelke, H. Schuehrer, R. Stephan, A. Wei, T. Werner, K. Wieczorek, M. Raab
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Taking SOI substrates and low-k dielectrics into high-volume microprocessor production
SOI and low-k technologies are rapidly approaching production maturity. This paper highlights several challenges found when moving them from development to high-volume manufacturing. In overcoming these challenges in wafer processing and transistor development, we have achieved yield learning and performance enhancement rates equivalent to or better than conventional technologies.
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