S. Butun, M. Gokkavas, Hongbo Yu, V. Strupinski, E. Ozbay
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Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors
Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates.
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