$0.13\ \mu \ mathm {m}$ SiGe BiCMOS技术的300 GHz四次谐波混频器

2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2018-08-01 DOI:10.1109/RFIT.2018.8524040

Chen Wang, Debin Hou, Jixin Chen, W. Hong

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引用次数: 1

摘要

报道了一种采用$0.13\ {\mu} \mathbf{m}$ SiGe BiCMOS技术的低转换损耗j波段宽带四次谐波抽运混频器。研究了具有最小寄生效应的紧凑等效抗并联二极管对(APDP)，以降低转换损耗。该混频器由一个外部功率放大器驱动，在70 GHz至85 GHz范围内具有不低于13 dBm的LO功率，在280 GHz至325 GHz范围内测量到的上转换损耗为21-26 dB。与其他j波段混频器相比，该工作在同等中频带宽下实现了最低的转换损耗。芯片占用$720\ \mu\ mathbf{m}乘以$ 380\ \mu\ mathbf{m} $，包括测试垫。

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A 300 GHz 4th-Harmonic Mixer in $0.13\ \mu \mathrm{m}$ SiGe BiCMOS Technology

A J-band wideband fourth-harmonically pumped mixer with low conversion loss using $0.13\ {\mu} \mathbf{m}$ SiGe BiCMOS technology is reported. Compact equivalent anti-parallel-diode-pair (APDP) with minimized parasitic effect is investigated for conversion loss reduction. Driven by an external power amplifier with no less than 13 dBm LO power from 70 GHz to 85 GHz, the mixer exhibits measured up-conversion loss of 21–26 dB from 280 GHz to 325 GHz. Compared with other J-band mixers, this work achieves the lowest conversion loss with comparable IF bandwidth. The chip occupies $720\ {\mu}\mathbf{m} \times 380\ \mu\mathrm{m}$ including the testing pads.

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2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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