{"title":"基于人工神经网络的微波场效应管噪声波模型的改进","authors":"Z. Marinković, O. Pronić-Rančić, V. Markovic","doi":"10.1109/ECCTD.2007.4529708","DOIUrl":null,"url":null,"abstract":"An application of artificial neural networks for accuracy improving of the microwave FET transistor noise modeling is presented in this paper. The proposed model is based on a basic transistor noise wave model whose noise wave temperatures are assumed to be constant over the operating frequency range. An artificial neural network is included in the model in order to make values of the noise parameters obtained by the original wave model more accurate.","PeriodicalId":445822,"journal":{"name":"2007 18th European Conference on Circuit Theory and Design","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Improved noise wave model of microwave FETs based on artificial neural networks\",\"authors\":\"Z. Marinković, O. Pronić-Rančić, V. Markovic\",\"doi\":\"10.1109/ECCTD.2007.4529708\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An application of artificial neural networks for accuracy improving of the microwave FET transistor noise modeling is presented in this paper. The proposed model is based on a basic transistor noise wave model whose noise wave temperatures are assumed to be constant over the operating frequency range. An artificial neural network is included in the model in order to make values of the noise parameters obtained by the original wave model more accurate.\",\"PeriodicalId\":445822,\"journal\":{\"name\":\"2007 18th European Conference on Circuit Theory and Design\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 18th European Conference on Circuit Theory and Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECCTD.2007.4529708\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 18th European Conference on Circuit Theory and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2007.4529708","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improved noise wave model of microwave FETs based on artificial neural networks
An application of artificial neural networks for accuracy improving of the microwave FET transistor noise modeling is presented in this paper. The proposed model is based on a basic transistor noise wave model whose noise wave temperatures are assumed to be constant over the operating frequency range. An artificial neural network is included in the model in order to make values of the noise parameters obtained by the original wave model more accurate.