瞬态光导衰减技术在HgCdTe中的寿命提取

D. Redfern, C. Musca, E. Smith, J. Dell, L. Faraone
{"title":"瞬态光导衰减技术在HgCdTe中的寿命提取","authors":"D. Redfern, C. Musca, E. Smith, J. Dell, L. Faraone","doi":"10.1109/COMMAD.1998.791640","DOIUrl":null,"url":null,"abstract":"The minority carrier lifetime of HgCdTe is studied using the photoconductive decay technique. The focus of this paper is to examine the various methods of extracting minority carrier lifetime and/or surface recombination parameters from photoconductive decay data, with particular reference to HgCdTe. It is shown that none of the current models unambiguously explain experimental results and that detailed lifetime extraction by photoconductive decay is still not a quantitative technique.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"On the transient photoconductive decay technique for lifetime extraction in HgCdTe\",\"authors\":\"D. Redfern, C. Musca, E. Smith, J. Dell, L. Faraone\",\"doi\":\"10.1109/COMMAD.1998.791640\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The minority carrier lifetime of HgCdTe is studied using the photoconductive decay technique. The focus of this paper is to examine the various methods of extracting minority carrier lifetime and/or surface recombination parameters from photoconductive decay data, with particular reference to HgCdTe. It is shown that none of the current models unambiguously explain experimental results and that detailed lifetime extraction by photoconductive decay is still not a quantitative technique.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791640\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

利用光导衰减技术研究了HgCdTe的少数载流子寿命。本文的重点是研究从光导衰减数据中提取少数载流子寿命和/或表面复合参数的各种方法,特别是HgCdTe。结果表明,目前的模型都不能明确地解释实验结果,并且通过光导衰减提取详细的寿命仍然不是一种定量技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On the transient photoconductive decay technique for lifetime extraction in HgCdTe
The minority carrier lifetime of HgCdTe is studied using the photoconductive decay technique. The focus of this paper is to examine the various methods of extracting minority carrier lifetime and/or surface recombination parameters from photoconductive decay data, with particular reference to HgCdTe. It is shown that none of the current models unambiguously explain experimental results and that detailed lifetime extraction by photoconductive decay is still not a quantitative technique.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信