{"title":"场效应异质晶体管运算放大器尺寸减小的工艺优化","authors":"E. Pankratov","doi":"10.13189/UJMS.2019.070202","DOIUrl":null,"url":null,"abstract":"In this paper we introduce an approach to decrease dimensions of operational amplifier based on field-effect heterotransistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific structure, doping of required areas of the heterostruc-ture by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.","PeriodicalId":375998,"journal":{"name":"Universal Journal of Materials Science","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimization of Manufacturing of Operational Amplifier Manufactured by Using Field-effect Heterotransistor to Decrease Their Dimensions\",\"authors\":\"E. Pankratov\",\"doi\":\"10.13189/UJMS.2019.070202\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we introduce an approach to decrease dimensions of operational amplifier based on field-effect heterotransistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific structure, doping of required areas of the heterostruc-ture by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.\",\"PeriodicalId\":375998,\"journal\":{\"name\":\"Universal Journal of Materials Science\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Universal Journal of Materials Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.13189/UJMS.2019.070202\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Universal Journal of Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.13189/UJMS.2019.070202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimization of Manufacturing of Operational Amplifier Manufactured by Using Field-effect Heterotransistor to Decrease Their Dimensions
In this paper we introduce an approach to decrease dimensions of operational amplifier based on field-effect heterotransistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific structure, doping of required areas of the heterostruc-ture by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
