用于多波段无线通信应用的cmos射频带通低噪声放大器

Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573) Pub Date : 2002-11-07 DOI:10.1109/RAWCON.2002.1030158

Shouxian Mou, Jianguo Ma, K. Yeo, M. Do

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引用次数: 4

摘要

基于CSMj 0.25 m CMOS技术，设计了一种新型多频带通低噪声放大器。LN.4能够在900MHz-980MHz、1.8GHz2.5GHz和SGHZ-~GHZ三个不同频段同时工作，每个频段对应的峰值增益分别为28.2dB、25dB和23.7dB。该LNA的工作频率范围几乎涵盖了现代流行的移动/无线通信的所有工作频段，如GSM900/1800、PCSIPHS、DECT、IMT-2000、第三代(3Gj)移动通信、蓝牙、HiperLAN以及IEEE 802.11a和802.llb&n1标准中规定的一些其他频段。LNA在1.5V低压电源下的噪声系数不超过5dE3，功耗为43mW。该设计为调制解调器的多标准移动/无线通信带来了极大的方便。通讯及

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A cmos rf bandpass low noise amplifier for multi-band wireless communication applications

A new multi-band bandpass low noise amplifier was designed based on Charted Semiconductor Manufacturing (CSMj 0.25 m CMOS technology. The LN.4 is capable of a simultaneous operation at three different frequency bands: 900MHz-980MHz, 1.8GHz2.5GHz and SGHZ-~GHZ, with the corresponding peak gains to each band of 28.2dB, 25dB and 23.7dB respectively. The operating frequency range of this LNA covers almost all of the working bands of modem popular mobile/wireless communications, such as GSM900/1800, PCSIPHS, DECT, IMT-2000, the thirdgeneration (3Gj mobile communication, the Bluetooth, HiperLAN and some other bands indicated in IEEE 802.11a and 802.llb&n1dards. The LNA also has the noise figure of no more than 5dE3 and the power consumption of 43mW at a low voltage supply of 1.5V. This design brings great convenience for modem multistandard mobile/wireless . communications and the

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Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573)

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