磁控溅射法制备SnO2薄膜对NH3的敏感性

O. V. Anisimov, N. Maksimova, E. Chernikov, E. Y. Sevastyanov, N. Sergeychenko
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引用次数: 5

摘要

采用微电子技术制备了SnO2薄膜传感器,在200 ~ 375℃的温度范围内测量了其NH3(氨)气敏特性。结果表明,表面掺杂铂显著提高了材料对氨的灵敏度,传感器的最佳工作温度为325℃。该传感器对20 ~ 350 ppm范围内的低NH3浓度具有较高的灵敏度,响应速度较快(10 s),恢复时间较快(30 s)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sensitivity to NH3 of SnO2 thin films prepared by magnetron sputtering
SnO2 thin film sensor was fabricated with microelectronic technology and NH3 (ammonia) gas sensing characteristics were measured in a temperature range 200–375 °C. It was observed that surface doping with platinum improves significantly the material's sensitivity to ammonia, and the optimal operational temperature of the sensor was 325 °C. The sensor showed high sensitivity to low NH3 concentration in the range 20–350 ppm with relatively fast response (10 s) and recovery times (30 s), respectively.
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