基于MOS-NDR器件和CMOS工艺电路的逻辑电路设计

Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05) Pub Date : 2005-07-20 DOI:10.1109/IWSOC.2005.80

K. Gan, Dong-Shong Liang, Chung-Chih Hsiao, Shih-Yu Wang, Feng-Chang Chiang, Cher-Shiung Tsai, Y. Chen, Shun-Huo Kuo, Chi-Pin Chen

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引用次数: 3

摘要

提出了一种由金属氧化物半导体场效应晶体管(MOS)器件组成的新型MOS- ndr器件。通过适当调制MOS参数，该器件在电流-电压特性中表现出负差分电阻(NDR)特性。我们设计了一个可以操作逆变器、NOR和NAND门的逻辑电路。器件和电路采用标准的0.35/spl μ m CMOS工艺制作。

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Logic circuit design based on MOS-NDR devices and circuits fabricated by CMOS process

We propose a new MOS-NDR device that is composed of the metal-oxide-semiconductor field-effect- transistor (MOS) devices. This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage characteristics by suitably modulating the MOS parameters. We design a logic circuit which can operate the inverter, NOR, and NAND gates. The devices and circuits are fabricated by the standard 0.35/spl mu/m CMOS process.

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Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)

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