T. Schimert, J. Brady, T. Fagan, M. Taylor, W. McCardel, R. Gooch, S. Ajmera, C. Hanson, A. Syllaios
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引用次数: 33
摘要
本文介绍了L-3通信红外产品公司(L-3 CIP)新一代微辐射热计焦平面阵列(FPA)技术的最新进展。L-3 CIP红外探测器技术是基于氢化非晶硅(a-Si:H)和非晶硅锗(a-SiGe:H)。大画幅高性能、快速、紧凑的红外fpa通过低热质量像素设计实现;优越的材料性能;先进的ROIC设计;以及晶圆级封装。目前在L-3 CIP, 17微米像素FPA阵列技术，包括320x240, 640 x 480和1024 x768阵列正在开发中。这些fpga的应用范围从低功耗微传感器到高分辨率近百万像素成像仪系统。
Amorphous silicon based large format uncooled FPA microbolometer technology
This paper presents recent developments in next generation microbolometer Focal Plane Array (FPA) technology at L-3 Communications Infrared Products (L-3 CIP). Infrared detector technology at L-3 CIP is based on hydrogenated amorphous silicon (a-Si:H) and amorphous silicon germanium(a-SiGe:H). Large format high performance, fast, and compact IR FPAs are enabled by a low thermal mass pixel design; favorable material properties; an advanced ROIC design; and wafer level packaging. Currently at L-3 CIP, 17 micron pixel FPA array technology including 320x240, 640 x 480 and 1024 x768 arrays is under development. Applications of these FPAs range from low power microsensors to high resolution near-megapixel imager systems.
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