{"title":"热辅助激光退火的优点","authors":"K. Shibahara","doi":"10.1109/IWJT.2005.203880","DOIUrl":null,"url":null,"abstract":"In this paper, a new scheme for laser annealing named partial-melt laser annealing (PMLA) is proposed based on the knowledges obtained with heat-assisted laser annealing (HALA) investigation. Its feasibility for 10 nm junction was demonstrated. The obtained sheet resistance indicated sufficient dopant activation by this method.","PeriodicalId":307038,"journal":{"name":"Extended Abstracts of the Fifth International Workshop on Junction Technology","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Benefits of heat-assist for laser annealing\",\"authors\":\"K. Shibahara\",\"doi\":\"10.1109/IWJT.2005.203880\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new scheme for laser annealing named partial-melt laser annealing (PMLA) is proposed based on the knowledges obtained with heat-assisted laser annealing (HALA) investigation. Its feasibility for 10 nm junction was demonstrated. The obtained sheet resistance indicated sufficient dopant activation by this method.\",\"PeriodicalId\":307038,\"journal\":{\"name\":\"Extended Abstracts of the Fifth International Workshop on Junction Technology\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Extended Abstracts of the Fifth International Workshop on Junction Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2005.203880\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the Fifth International Workshop on Junction Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2005.203880","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, a new scheme for laser annealing named partial-melt laser annealing (PMLA) is proposed based on the knowledges obtained with heat-assisted laser annealing (HALA) investigation. Its feasibility for 10 nm junction was demonstrated. The obtained sheet resistance indicated sufficient dopant activation by this method.
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