键合线阵列建模及其在120w x波段内匹配AlGaN/GaN功率放大器设计中的应用

2016 International Conference on Electromagnetics in Advanced Applications (ICEAA) Pub Date : 2016-09-01 DOI:10.1109/ICEAA.2016.7731428

L. Gu, S. Tang, Y. Xu, Y. Yang, T. Chen

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引用次数: 3

摘要

针对大功率高效功率放大器的设计，提出了一种新的内部匹配网络键合线阵列建模方法。基于该建模方法，提出了一种连续波(CW)条件下120 W x波段内匹配的AlGaN/GaN PA。该功率放大器在7.7 GHz至8.7 GHz范围内可提供50.6 dBm (115 W)以上的相对稳定输出功率和42%以上的功率增益，同时保持10.1 dB以上的稳定增益。这个作品与其他最先进的作品相比是比较有竞争力的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling of bonding wires array and its application in the design of a 120 W X-band internally matched AlGaN/GaN power amplifier

This paper proposed a novel modeling method of bonding wires array for internally matched network for high power and high efficiency power amplifier design. Based on this modeling method, a 120 W X-band internally-matched AlGaN/GaN PA under continues wave (CW) condition is presented. The proposed power amplifier can provide a relatively stable output power above 50.6 dBm (115 W) and power added efficiency above 42% from 7.7 GHz to 8.7 GHz, while maintain a stable gain above 10.1 dB. This work is relatively competitive comparing with other state-of-the-art works.

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2016 International Conference on Electromagnetics in Advanced Applications (ICEAA)

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