高频应用BSTO薄膜的最佳微波性能

2003 33rd European Microwave Conference, 2003 Pub Date : 2003-10-01 DOI:10.1109/EUMA.2003.340861

A. Tumarkin, S. Razumov, A. Gagarin, A. Kozyrev

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引用次数: 2

摘要

在1 ~ 30 GHz宽频率范围内，研究了沉积参数对沉积在氧化铝衬底上的BaxSr1-xTiO3 (BSTO)薄膜微波性能的影响。在室温下获得了高可调性(n)和低损耗(tan¿)的最佳组合。在1 GHz和零偏压下，最佳BSTO薄膜的n = 2.1和tan¿=0.016。该结果是在氧化铝衬底上溅射BSTO的最佳报告之一。

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Optimal Microwave properties of thin BSTO films for high frequency applications

The influence of deposition parameters on microwave properties of BaxSr1-xTiO3 (BSTO) films deposited on alumina substrate has been investigated in a wide frequency range (1-30 GHz). The best combination of high tunability (n) and low losses (tan ¿) at room temperature was obtained for the 30% Ba content target. The best BSTO films exhibited n = 2.1 and tan¿=0.016 at 1 GHz and zero bias. This result is among the best reported for sputtered BSTO on alumina substrates.

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2003 33rd European Microwave Conference, 2003

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