用于成像系统的220GHz GaAs集成肖特基二极管混频器

2018 11th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT) Pub Date : 2018-09-01 DOI:10.1109/UCMMT45316.2018.9015750

Yilin Yang, Bo Zhang, D. Ji, Yong Fan

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引用次数: 0

摘要

本文提出了一种基于GaAs集成肖特基二极管的220GHz宽带次谐波混频器，用于未来的成像系统。分析了倒装二极管手工组装对倒装二极管性能的影响。并采用集成二极管技术提高了多通道成像前端各混频器性能与成像系统整体性能的一致性。仿真结果表明，在185GHz ~ 255ghz频段内，混频器的转换损耗小于9dB, DSB噪声温度小于900K。

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220GHz GaAs Integrated Schottky Diode Mixer for Imaging System

In this paper, a wide band 220GHz sub-harmonic mixer based on GaAs integrated Schottky diode is proposed for future imaging system. The influence brought by manual assembly of the flip chip diodes is analyzed. And the integrated diode technology is applied to improve the consistency between the performance of each mixer in the multichannel imaging front-end and the integral performance of the imaging system. Simulated results show that within the band from 185GHz to 255 GHz, the conversion loss of the mixer is less than 9dB, and the DSB noise temperature is less than 900K.

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2018 11th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT)

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