纳米级技术中的EDA挑战

J. Kawa, C. Chiang, R. Camposano
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引用次数: 18

摘要

自90纳米节点开始以来,在保持一致的功能、可靠性和产量设计的同时,进一步缩放晶体管的挑战已经大大增加。虽然这些挑战贯穿于制造业、EDA和设计界,但我们相信EDA行业的责任和目标是尽可能彻底和无缝地处理这些问题,使这些挑战对设计师透明。在本文中,我们揭示并分析了其中的许多挑战,并简要介绍了EDA工具为处理这些挑战提供的解决方案。我们还展望并涵盖了与新兴的自下而上的纳米材料流与传统的CMOS自上而下的工艺流集成相关的一些未来挑战,这些工艺流也已进入纳米时代
本文章由计算机程序翻译,如有差异,请以英文原文为准。
EDA Challenges in Nano-scale Technology
Since the onset of the 90 nm node the challenges associated with further transistor scaling while maintaining a consistently functional, reliable, and yielding design have increased substantially. While those challenges carry across the spectrum of the manufacturing, the EDA, and the design communities, we believe it is the responsibility and the goal of the EDA industry to deal with those issues as thoroughly and as seamlessly as possible to make those challenges transparent to the designer. In this paper we expose and analyze a plurality of those challenges and briefly go over the solutions EDA tools are offering for dealing with them. We also look forward and cover some of the future challenges associated with the integration of the emerging bottoms-up nano-materials flow with the traditional CMOS top-down process flow which has also entered the nano-era
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