提高半导体激光器速度的新技术

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493692

M. K. Haldar, F. Mendis, J. Wang

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引用次数: 0

摘要

半导体激光二极管直接调制带宽的极限是由速率方程决定的本征带宽。在本文中，我们证明了通过使用注入锁定可以显著增加固有带宽。我们的分析表明，对于中等和高注入水平，激光二极管的带宽可以增加到在相同偏置电流下自由运行的激光二极管带宽的几倍。所需的注入功率取决于激光器参数，但小于自由运行激光器的功率。然而，注入的光子数和失谐必须在动态注入锁定状态所需的值范围内。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New technique for increasing speed of semiconductor lasers

The ultimate limit of direct modulation bandwidth of a semiconductor laser diode is the intrinsic bandwidth determined by rate equations. In this paper we show that the intrinsic bandwidth can be significantly increased through the use of injection-locking. Our analysis shows that for moderate and high injection levels, the bandwidth of a laser diode can be increased to several times the bandwidth of a free running laser diode operating at the same bias current. The required injection power depends on laser parameters but is less than the power of the free running laser. However, the injected photon number and detuning must lie within the range of values required for the dynamic injection-locked state.

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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