GMR传感器ESD损伤阈值

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI:10.1109/EOSESD.2000.890094

R. Tao, F.G. Zhao

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引用次数: 1

摘要

GMR传感器在电流GMR头云台组装(HGA)和头堆组装(HSA)工艺中，基本上有两种ESD损伤模式:电流损伤模式和电压损伤模式。在实际的GMR磁头生产中，电流损伤模式占了ESD损伤的大部分，这表明GMR传感器被意外的瞬态电流通过而损坏。本文讨论了为当前损伤模式定义通用ESD阈值的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Threshold of ESD damage to GMR sensor

There are basically two kinds of ESD damage modes for GMR sensors in current GMR head gimbal assembly (HGA) and head stack assembly (HSA) processes: the current damage mode and the voltage damage mode. The current damage mode accounts for most of the ESD damage in actual GMR head production, which indicates that the GMR sensor gets damaged by an unexpected transient current passing through it. This paper discusses the possibility of defining a generic ESD threshold for the current damage mode.

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Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)

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