S. Dalmia, J. Hobbs, V. Sundaram, M. Swaminathan, Seock-Hee Lee, F. Ayazi, G. White, S. Bhattacharya
{"title":"基于sop的有机衬底高Q射频无源的设计与优化","authors":"S. Dalmia, J. Hobbs, V. Sundaram, M. Swaminathan, Seock-Hee Lee, F. Ayazi, G. White, S. Bhattacharya","doi":"10.1109/ECTC.2002.1008142","DOIUrl":null,"url":null,"abstract":"Integration of passive devices such as inductors and capacitors in packages or on silicon is an important step towards miniaturization and reduction of cost. These passive devices are used as stand-alone components or form an integral part of filters, oscillators, amplifiers, mixers and other RF circuits. This paper discusses the design of high Q inductors and high Q capacitors in organic substrates. Inductors with maximum quality factors in the range of 60-180 were obtained at frequencies in the 1-3 GHz band for inductances in the range of 1 nH-20 nH. This is the first demonstration of such high Q inductors in organic substrates processed using low-temperature (<200/spl deg/C) processes. The dimensions of all inductors are comparable to a low temperature co-fired ceramic (LTCC, <900/spl deg/C) and multichip module deposition (400/spl deg/C<MCM-D<500/spl deg/C) technology process and well suited for integration in a variety of applications. The paper also discusses the performance of embedded capacitors in organic substrates. Although the Q factors for the capacitors in organic technologies are comparable to ceramic technologies, they do not compare well with the performance of inductors. The results for embedded capacitors show the need for lower loss materials compared to those currently used in low-temperature organic passive technology.","PeriodicalId":285713,"journal":{"name":"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"Design and optimization of high Q RF passives on SOP-based organic substrates\",\"authors\":\"S. Dalmia, J. Hobbs, V. Sundaram, M. Swaminathan, Seock-Hee Lee, F. Ayazi, G. White, S. Bhattacharya\",\"doi\":\"10.1109/ECTC.2002.1008142\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Integration of passive devices such as inductors and capacitors in packages or on silicon is an important step towards miniaturization and reduction of cost. These passive devices are used as stand-alone components or form an integral part of filters, oscillators, amplifiers, mixers and other RF circuits. This paper discusses the design of high Q inductors and high Q capacitors in organic substrates. Inductors with maximum quality factors in the range of 60-180 were obtained at frequencies in the 1-3 GHz band for inductances in the range of 1 nH-20 nH. This is the first demonstration of such high Q inductors in organic substrates processed using low-temperature (<200/spl deg/C) processes. The dimensions of all inductors are comparable to a low temperature co-fired ceramic (LTCC, <900/spl deg/C) and multichip module deposition (400/spl deg/C<MCM-D<500/spl deg/C) technology process and well suited for integration in a variety of applications. The paper also discusses the performance of embedded capacitors in organic substrates. Although the Q factors for the capacitors in organic technologies are comparable to ceramic technologies, they do not compare well with the performance of inductors. The results for embedded capacitors show the need for lower loss materials compared to those currently used in low-temperature organic passive technology.\",\"PeriodicalId\":285713,\"journal\":{\"name\":\"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.2002.1008142\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2002.1008142","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and optimization of high Q RF passives on SOP-based organic substrates
Integration of passive devices such as inductors and capacitors in packages or on silicon is an important step towards miniaturization and reduction of cost. These passive devices are used as stand-alone components or form an integral part of filters, oscillators, amplifiers, mixers and other RF circuits. This paper discusses the design of high Q inductors and high Q capacitors in organic substrates. Inductors with maximum quality factors in the range of 60-180 were obtained at frequencies in the 1-3 GHz band for inductances in the range of 1 nH-20 nH. This is the first demonstration of such high Q inductors in organic substrates processed using low-temperature (<200/spl deg/C) processes. The dimensions of all inductors are comparable to a low temperature co-fired ceramic (LTCC, <900/spl deg/C) and multichip module deposition (400/spl deg/C
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