A Novel Triple Pulse Test Circuit for Complete Characterization of SiC MOSFET

In recent times Silicon Carbide (SiC) based power MOSFETs are replacing the conventional Silicon power MOS-FETs due to their superior properties. For optimal use of the SiC MOSFETs, it is necessary to understand their static and dynamic characteristics, to study the device characterization. The existing method of static characterization by using a commercial curve tracer is quite expensive. This paper presents a simple, low-cost Triple Pulse Test (TPT) circuit to perform static characterization as well as dynamic characterization of SiC MOSFET. The first two pulses are used for determining the dynamic parameters of the SiC MOSFET while the third pulse is used for static characterization. For obtaining static characteristics, a constant current is passed through the SiC MOSFET during the third pulse. The different device characteristics are obtained and discussed.