用TTIP和水原子层沉积Pt/TiO2/Pt和Pt/TiO2/TiN结构的电学性质

2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) Pub Date : 2022-10-23 DOI:10.1109/ASDAM55965.2022.9966782

Matej Horský, P. Nádaždy, E. Dobročka, D. Gregušová, A. Seifertová, J. Dérer, J. Fedor, T. Ščepka, B. Hudec

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引用次数: 0

摘要

从沉积温度和结晶度的角度讨论了TTIP和水在TiO2薄膜上的原子层沉积(ALD)生长。在TiN或Pt上使用锐钛矿- TiO2 ALD薄膜电介质的金属-绝缘体-金属器件对氧化和非氧化热处理的稳健性进行了研究，并将其用作氧化肖特基二极管或忆阻器选择器。

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Electrical properties of Pt/TiO2/Pt and Pt/TiO2/TiN structures grown by atomic layer deposition using TTIP and water

Atomic layer deposition (ALD) growth of TiO2 thin films using TTIP and water is discussed in respect to deposition temperature and resulting crystallinity. Metal-insulator-metal devices with anatase- TiO2 ALD thin film dielectrics on TiN or Pt are investigated for their robustness against oxidative and non-oxidative thermal treatments, towards their use as oxide Schottky diodes or memristor selectors.

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来源期刊

2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)

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