高频去嵌入网络及其误差分析

2016 IEEE International Conference on Electronic Information and Communication Technology (ICEICT) Pub Date : 2016-08-01 DOI:10.1109/ICEICT.2016.7879754

S. Dong, J. Lees, P. Tasker

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引用次数: 1

摘要

器件的内在性能在功率放大器设计中具有重要意义。提出了一种基于物理建模思想的5.8 GHz封装功率器件去嵌入网络更新方法。提出了一种封装GaN HEMT的去嵌入网络，并基于波形工程分析了其误差。研究结果对去嵌入网络的优化具有一定的指导意义。

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A de-embedding network at higher frequency and its error analysis

The intrinsic performance of the devices is of great meaning during power amplifiers design. A method to update de-embedding network at 5.8 GHz for packaged power devices is put forward based on physical modeling idea. The de-embedding network of a packaged GaN HEMT is presented and its errors are analyzed based on waveform engineering. The results may well lead to optimization of the de-embedding network.

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2016 IEEE International Conference on Electronic Information and Communication Technology (ICEICT)

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