一种2 - 16ghz CMOS电流复用级联超宽带低噪声放大器

2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC) Pub Date : 2011-04-24 DOI:10.1109/SIECPC.2011.5876910

K. Yousef, H. Jia, R. Pokharel, A. Allam, M. Ragab, K. Yoshida

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引用次数: 16

摘要

本文介绍了一种2 - 16ghz超宽带低噪声放大器的设计。所提出的LNA增益为11.5±0.85 dB, NF小于2.82 dB。在工作频带内实现了良好的输入和输出阻抗匹配、良好的隔离和线性。所提出的超宽带LNA从1.8V电源消耗18.14 mW的功率。采用0.18 μm CMOS工艺对该超宽带LNA进行了设计和仿真。

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A 2–16 GHz CMOS current reuse cascaded ultra-wideband low noise amplifier

This paper presents the design of a 2–16 GHz ultra wide band low noise amplifier (UWB LNA). The proposed LNA has a gain of 11.5 ± 0.85 dB with NF less than 2.82 dB. Good input and output impedance matching, good isolation and linearity are achieved over the operating frequency band. The proposed UWB LNA consumes 18.14 mW of power from 1.8V supply. This UWB LNA is designed and simulated in 0.18 μm CMOS process.

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来源期刊

2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC)

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