{"title":"金属法兰开放式同轴线在导体背衬介质层中的终端研究","authors":"S. Fan, D. Misra","doi":"10.1109/IMTC.1990.65956","DOIUrl":null,"url":null,"abstract":"A spectral domain approach is used to analyze aperture fields and aperture admittance of an open-ended coaxial line terminated by a conductor-backed dielectric layer. The aperture admittance and capacitance at various frequencies and thicknesses are calculated for various dielectrics. It is shown that, for d>or=2b, the results are very close to those for the infinitely thick dielectric medium. The results are expected to be useful in developing suitable procedures for measuring the electrical properties of samples with small thicknesses.<<ETX>>","PeriodicalId":404761,"journal":{"name":"7th IEEE Conference on Instrumentation and Measurement Technology","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A study on the metal-flanged open-ended coaxial line terminating in a conductor-backed dielectric layer\",\"authors\":\"S. Fan, D. Misra\",\"doi\":\"10.1109/IMTC.1990.65956\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A spectral domain approach is used to analyze aperture fields and aperture admittance of an open-ended coaxial line terminated by a conductor-backed dielectric layer. The aperture admittance and capacitance at various frequencies and thicknesses are calculated for various dielectrics. It is shown that, for d>or=2b, the results are very close to those for the infinitely thick dielectric medium. The results are expected to be useful in developing suitable procedures for measuring the electrical properties of samples with small thicknesses.<<ETX>>\",\"PeriodicalId\":404761,\"journal\":{\"name\":\"7th IEEE Conference on Instrumentation and Measurement Technology\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-02-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"7th IEEE Conference on Instrumentation and Measurement Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMTC.1990.65956\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"7th IEEE Conference on Instrumentation and Measurement Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMTC.1990.65956","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A study on the metal-flanged open-ended coaxial line terminating in a conductor-backed dielectric layer
A spectral domain approach is used to analyze aperture fields and aperture admittance of an open-ended coaxial line terminated by a conductor-backed dielectric layer. The aperture admittance and capacitance at various frequencies and thicknesses are calculated for various dielectrics. It is shown that, for d>or=2b, the results are very close to those for the infinitely thick dielectric medium. The results are expected to be useful in developing suitable procedures for measuring the electrical properties of samples with small thicknesses.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
