G. Umana-Membreno, T. Fehlberg, S. Kolluri, D. Brown, G. Parish, B. Nener, S. Keller, U. Mishra, L. Faraone
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Anisotropic two-dimensional electron gas transport in N-polar GaN/AlGaN heterostructures grown on vicinal substrates
In this work, we present results of a magneto-transport study of two-dimensional electron gas transport in N-polar GaN/AlGaN heterostuctures grown on misoriented sapphire substrates. It is shown that the multi-atomic “steps” resulting from epitaxial growth on misoriented substrates leads to significantly lower average two-dimensional electron gas (2DEG) mobility in the direction perpendicular to the interfacial steps which is accompanied by significant broadening of the 2DEG mobility distribution.
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