线性度与LTE信号带宽和电源电压的关系研究，用于连续波负载-拉力的高效率SiGe功率放大器设计

2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2016-03-01 DOI:10.1109/WMCAS.2016.7577480

J. Tsay, Juan José Vaquero López, J. Mayeda, T. Hall, B. T. Nukala, D. Lie

{"title":"线性度与LTE信号带宽和电源电压的关系研究，用于连续波负载-拉力的高效率SiGe功率放大器设计","authors":"J. Tsay, Juan José Vaquero López, J. Mayeda, T. Hall, B. T. Nukala, D. Lie","doi":"10.1109/WMCAS.2016.7577480","DOIUrl":null,"url":null,"abstract":"This paper shows a highly-efficient SiGe power amplifier (PA) design where its linearity, power-added efficiency (PAE) and POUT are studied vs. different LTE 16QAM signal BW and supply voltage. The monolithic PA, designed in 0.35-μm SiGe BiCMOS technology with through-silicon via (TSV) using continuous wave (CW) load-pull, passes the stringent LTE spectrum emission mask (SEM) at average linear POUT = 23.5/23.1/23.1 dBm with 48.0/45.2/45.0% PAE for LTE 5/10/20 MHz inputs. The adjacent channel leakage ratios ACLR1/ACLR2 exhibit opposite trends vs. increasing signal BW at POUT below compression (P1dB = 22.3 dBm), while past compression ACLR1/ACLR2 increase with larger BW, with some ACLR2 asymmetry at 10/20 MHz. Lowering the supply voltage has a larger effect on ACLR degradation than higher signal BW. The data suggests that static CW load-pull data is useful for PA design even for 16QAM modulated signal but cannot accurately predict SiGe PA's linearity performance.","PeriodicalId":227955,"journal":{"name":"2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A study on linearity vs. LTE signal bandwidth and supply voltage for high-efficiency SiGe power amplifier design with CW load-pull\",\"authors\":\"J. Tsay, Juan José Vaquero López, J. Mayeda, T. Hall, B. T. Nukala, D. Lie\",\"doi\":\"10.1109/WMCAS.2016.7577480\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper shows a highly-efficient SiGe power amplifier (PA) design where its linearity, power-added efficiency (PAE) and POUT are studied vs. different LTE 16QAM signal BW and supply voltage. The monolithic PA, designed in 0.35-μm SiGe BiCMOS technology with through-silicon via (TSV) using continuous wave (CW) load-pull, passes the stringent LTE spectrum emission mask (SEM) at average linear POUT = 23.5/23.1/23.1 dBm with 48.0/45.2/45.0% PAE for LTE 5/10/20 MHz inputs. The adjacent channel leakage ratios ACLR1/ACLR2 exhibit opposite trends vs. increasing signal BW at POUT below compression (P1dB = 22.3 dBm), while past compression ACLR1/ACLR2 increase with larger BW, with some ACLR2 asymmetry at 10/20 MHz. Lowering the supply voltage has a larger effect on ACLR degradation than higher signal BW. The data suggests that static CW load-pull data is useful for PA design even for 16QAM modulated signal but cannot accurately predict SiGe PA's linearity performance.\",\"PeriodicalId\":227955,\"journal\":{\"name\":\"2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WMCAS.2016.7577480\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMCAS.2016.7577480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文展示了一种高效的SiGe功率放大器(PA)设计，在不同的LTE 16QAM信号BW和电源电压下，研究了其线性度，功率附加效率(PAE)和POUT。该单片PA采用0.35 μm SiGe BiCMOS技术，采用连续波(CW)负载-拉扯，通过了严格的LTE频谱发射掩模(SEM)，平均线性POUT = 23.5/23.1/23.1 dBm, PAE为48.0/45.2/45.0%，适用于LTE 5/10/20 MHz输入。相邻信道泄漏比ACLR1/ACLR2表现出相反的趋势，在POUT低于压缩(P1dB = 22.3 dBm)时信号BW增加，而过去压缩时ACLR1/ACLR2随BW增大而增加，在10/20 MHz时ACLR2有一定的不对称性。降低电源电压对ACLR退化的影响要大于提高信号BW。数据表明，静态连续波负载-拉力数据即使对16QAM调制信号也是有用的，但不能准确预测SiGe放大器的线性性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A study on linearity vs. LTE signal bandwidth and supply voltage for high-efficiency SiGe power amplifier design with CW load-pull

This paper shows a highly-efficient SiGe power amplifier (PA) design where its linearity, power-added efficiency (PAE) and POUT are studied vs. different LTE 16QAM signal BW and supply voltage. The monolithic PA, designed in 0.35-μm SiGe BiCMOS technology with through-silicon via (TSV) using continuous wave (CW) load-pull, passes the stringent LTE spectrum emission mask (SEM) at average linear POUT = 23.5/23.1/23.1 dBm with 48.0/45.2/45.0% PAE for LTE 5/10/20 MHz inputs. The adjacent channel leakage ratios ACLR1/ACLR2 exhibit opposite trends vs. increasing signal BW at POUT below compression (P1dB = 22.3 dBm), while past compression ACLR1/ACLR2 increase with larger BW, with some ACLR2 asymmetry at 10/20 MHz. Lowering the supply voltage has a larger effect on ACLR degradation than higher signal BW. The data suggests that static CW load-pull data is useful for PA design even for 16QAM modulated signal but cannot accurately predict SiGe PA's linearity performance.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)

自引率

0.00%

发文量