带隙工程硅双极晶体管的性能分析

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI:10.1109/ELECTRO.2009.5441168

Vishal, Ammar, R. Chauhan

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引用次数: 2

摘要

硅锗异质结双极晶体管(SiGe HBTs)代表了第一个实用的带隙工程硅基晶体管。探讨了SiGe HBT的相关设计问题，使其适合高速应用。重点讨论了在高频下获得合理的增益值需要低的基极电阻。与硅双极晶体管相比，这种hbt获得了更高的增益值。

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Performance analysis of a bandgap engineered Silicon bipolar transistor

Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBTs) represents the first practical bandgap-engineered Silicon-based transistor. The design issues related to SiGe HBT that makes it suitable for high speed application has been explored. Emphasis has been given to the requirement of low base resistance for achieving a reasonable value of gain at a high frequency. Compared to Silicon bipolar transistors much higher values of gain are obtained for such HBTs.

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2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems

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