{"title":"2003年IEEE存储器技术、设计和测试国际研讨会记录","authors":"","doi":"10.1109/MTDT.2003.1222353","DOIUrl":null,"url":null,"abstract":"The following topics are dealt with: application specific DRAMs; cost optimum embedded DRAM design; memory test generation for DRAM defects; linked faults analysis in RAMs; reducing test time of embedded SRAMs; testability-driven optimizer and wrapper generator for embedded memories; ITRS commodity roadmap; electrical simulation model for the Chalcogenide phase-change memory cell.","PeriodicalId":412381,"journal":{"name":"Records of the 2003 International Workshop on Memory Technology, Design and Testing","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Records of the 2003 IEEE International Workshop on Memory Technology, Design and Testing\",\"authors\":\"\",\"doi\":\"10.1109/MTDT.2003.1222353\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The following topics are dealt with: application specific DRAMs; cost optimum embedded DRAM design; memory test generation for DRAM defects; linked faults analysis in RAMs; reducing test time of embedded SRAMs; testability-driven optimizer and wrapper generator for embedded memories; ITRS commodity roadmap; electrical simulation model for the Chalcogenide phase-change memory cell.\",\"PeriodicalId\":412381,\"journal\":{\"name\":\"Records of the 2003 International Workshop on Memory Technology, Design and Testing\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Records of the 2003 International Workshop on Memory Technology, Design and Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.2003.1222353\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 2003 International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.2003.1222353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Records of the 2003 IEEE International Workshop on Memory Technology, Design and Testing
The following topics are dealt with: application specific DRAMs; cost optimum embedded DRAM design; memory test generation for DRAM defects; linked faults analysis in RAMs; reducing test time of embedded SRAMs; testability-driven optimizer and wrapper generator for embedded memories; ITRS commodity roadmap; electrical simulation model for the Chalcogenide phase-change memory cell.