Z. B. Sadykov, R. A. Wolf, V. Y. Shein, V. Erokhin
{"title":"250 Nm硅锗工艺中基于希尔伯特电池内置对称器件的宽带有源混频器","authors":"Z. B. Sadykov, R. A. Wolf, V. Y. Shein, V. Erokhin","doi":"10.1109/WECONF.2018.8604324","DOIUrl":null,"url":null,"abstract":"In this article, topological features and results of measurements of a two-balanced active mixer with integrated balancing devices are considered. The mixer core is realized on a Gilbert cell using heterojunction bipolar transistors (HBT), made in Si-Ge BiCMOS technology at 0.25 µm, The measured characteristics of the mixer in the 0.9-16 GHz band are as follows: the GC conversion gain is more than 7.5 dB. The isolation of the LO signal penetration into the radio frequency signal is about 43 dB, the RF-IF and LO-IF isolation is 21 … 23 dB, area 1 mm2.","PeriodicalId":198958,"journal":{"name":"2018 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Broadband Active Mixer Based on the Hilbert Cell with Built-In Symmetric Devices in the Silicon-Germanium Technological Process 250 Nm\",\"authors\":\"Z. B. Sadykov, R. A. Wolf, V. Y. Shein, V. Erokhin\",\"doi\":\"10.1109/WECONF.2018.8604324\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, topological features and results of measurements of a two-balanced active mixer with integrated balancing devices are considered. The mixer core is realized on a Gilbert cell using heterojunction bipolar transistors (HBT), made in Si-Ge BiCMOS technology at 0.25 µm, The measured characteristics of the mixer in the 0.9-16 GHz band are as follows: the GC conversion gain is more than 7.5 dB. The isolation of the LO signal penetration into the radio frequency signal is about 43 dB, the RF-IF and LO-IF isolation is 21 … 23 dB, area 1 mm2.\",\"PeriodicalId\":198958,\"journal\":{\"name\":\"2018 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WECONF.2018.8604324\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WECONF.2018.8604324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Broadband Active Mixer Based on the Hilbert Cell with Built-In Symmetric Devices in the Silicon-Germanium Technological Process 250 Nm
In this article, topological features and results of measurements of a two-balanced active mixer with integrated balancing devices are considered. The mixer core is realized on a Gilbert cell using heterojunction bipolar transistors (HBT), made in Si-Ge BiCMOS technology at 0.25 µm, The measured characteristics of the mixer in the 0.9-16 GHz band are as follows: the GC conversion gain is more than 7.5 dB. The isolation of the LO signal penetration into the radio frequency signal is about 43 dB, the RF-IF and LO-IF isolation is 21 … 23 dB, area 1 mm2.