250 Nm硅锗工艺中基于希尔伯特电池内置对称器件的宽带有源混频器

Z. B. Sadykov, R. A. Wolf, V. Y. Shein, V. Erokhin
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引用次数: 0

摘要

本文考虑了具有集成平衡装置的双平衡有源混合器的拓扑特征和测量结果。该混频器芯采用硅锗BiCMOS技术制成的异质结双极晶体管(HBT),在0.25µm的Gilbert cell上实现。混频器在0.9 ~ 16 GHz频段的实测特性如下:GC转换增益大于7.5 dB。LO信号渗透到射频信号的隔离度约为43 dB, RF-IF和LO- if隔离度为21…23 dB,面积为1 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Broadband Active Mixer Based on the Hilbert Cell with Built-In Symmetric Devices in the Silicon-Germanium Technological Process 250 Nm
In this article, topological features and results of measurements of a two-balanced active mixer with integrated balancing devices are considered. The mixer core is realized on a Gilbert cell using heterojunction bipolar transistors (HBT), made in Si-Ge BiCMOS technology at 0.25 µm, The measured characteristics of the mixer in the 0.9-16 GHz band are as follows: the GC conversion gain is more than 7.5 dB. The isolation of the LO signal penetration into the radio frequency signal is about 43 dB, the RF-IF and LO-IF isolation is 21 … 23 dB, area 1 mm2.
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