C.H. Lee, J. Yoon, C. Lee, H.M. Yang, K.N. Kim, T.Y. Kim, H. Kang, Y. Ahn, Donggun Park, Kinam Kim
{"title":"新型体系FinFET单元阵列晶体管DRAM，负字线操作，适用于60nm及以下技术","authors":"C.H. Lee, J. Yoon, C. Lee, H.M. Yang, K.N. Kim, T.Y. Kim, H. Kang, Y. Ahn, Donggun Park, Kinam Kim","doi":"10.1109/VLSIT.2004.1345434","DOIUrl":null,"url":null,"abstract":"In this paper, a highly manufacturable 512M FinFET DRAM with novel body tied FinFET cell array transistor on bulk Si substrate has been successfully integrated and the characteristics were compared with RCAT (Recess Channel Array Transistor) and planar cell array transistor DRAM for the first time. We also propose the NWL (Negative Word Line) scheme with low channel doping body tied FinFET for a highly manufacturable FinFET DRAM for sub 60nm technology node.","PeriodicalId":297052,"journal":{"name":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Novel body tied FinFET cell array transistor DRAM with negative word line operation for sub 60nm technology and beyond\",\"authors\":\"C.H. Lee, J. Yoon, C. Lee, H.M. Yang, K.N. Kim, T.Y. Kim, H. Kang, Y. Ahn, Donggun Park, Kinam Kim\",\"doi\":\"10.1109/VLSIT.2004.1345434\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a highly manufacturable 512M FinFET DRAM with novel body tied FinFET cell array transistor on bulk Si substrate has been successfully integrated and the characteristics were compared with RCAT (Recess Channel Array Transistor) and planar cell array transistor DRAM for the first time. We also propose the NWL (Negative Word Line) scheme with low channel doping body tied FinFET for a highly manufacturable FinFET DRAM for sub 60nm technology node.\",\"PeriodicalId\":297052,\"journal\":{\"name\":\"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2004.1345434\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2004.1345434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel body tied FinFET cell array transistor DRAM with negative word line operation for sub 60nm technology and beyond
In this paper, a highly manufacturable 512M FinFET DRAM with novel body tied FinFET cell array transistor on bulk Si substrate has been successfully integrated and the characteristics were compared with RCAT (Recess Channel Array Transistor) and planar cell array transistor DRAM for the first time. We also propose the NWL (Negative Word Line) scheme with low channel doping body tied FinFET for a highly manufacturable FinFET DRAM for sub 60nm technology node.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
