一种用于改善低电源电压下闪烁噪声的外延沟道MOSFET

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852809

T. Ohguro, R. Hasumi, T. Ishikawa, M. Nishigori, H. Oyamatsu, F. Matsuoka

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引用次数: 8

摘要

我们研究了0.11 /spl mu/m CMOS在低电源电压下的模拟性能。为了避免低电源电压下的闪烁噪声退化，不植入光晕的外延沟道MOSFET被证明是有效的。

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An epitaxial channel MOSFET for improving flicker noise under low supply voltage

We investigated the analog performance of a 0.11 /spl mu/m CMOS under a low supply voltage. In order to avoid flicker noise degradation under the low supply voltage, an epitaxial channel MOSFET without halo implantation was shown to be effective.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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