栅极偏置对SiC功率mosfet雪崩坚固性的影响

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-28 DOI:10.23919/ISPSD.2017.7988986

A. Fayyaz, A. Castellazzi, G. Romano, M. Riccio, A. Irace, J. Urresti, N. Wright

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引用次数: 12

摘要

本文研究了负栅偏置电压(Vgs)对商用最先进的碳化硅功率mosfet雪崩击穿稳健性的影响。该器件在雪崩状态下承受能量耗散的能力是所有需要负载转储和/或受益于无缓冲器转换器设计的应用的隐含优点。SiC材料优越的材料特性意味着SiC mosfet即使在1200V下也表现出显著的固有雪崩稳健性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs

This paper investigates the effect of negative gate bias voltage (Vgs) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device's ability to withstand energy dissipation during avalanche regime is a connoting figure of merit for all applications requiring load dumping and/or benefiting from snubber-less converter design. The superior material properties of SiC material means that SiC MOSFETs even at 1200V exhibit significant intrinsic avalanche robustness.

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来源期刊

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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