GaInP/GaAs HBT的大信号模型

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493697

M. J. Kelly, J. Stewart, A. Patterson

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引用次数: 1

摘要

提出了GaInP/GaAs异质结双极晶体管的大信号模型。所提出的模型是一个集总元素混合pi拓扑。外部元素是通过直接提取技术确定的，而内部元素主要是通过直接小信号提取和优化的组合获得的。直流传输特性使用V/sub /相关函数建模，其中方程常数随基极电流I/sub b/变化。器件的非均匀增益也包括在内。该模型在直流特性、s参数和功率传输特性的测量值和建模值之间具有良好的一致性。该模型可以在大多数最新的CAD软件包上实现，并且已经在一系列设备上生成。

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A large signal model for a GaInP/GaAs HBT

A large signal model for a GaInP/GaAs Heterojunction Bipolar Transistor is presented. The proposed model is a lumped element hybrid-pi topology. The extrinsic elements are determined using direct extraction techniques and the intrinsic elements are obtained from a combination of mainly direct small signal extraction and optimisation. The dc transfer characteristics are modelled using a V/sub ce/ dependent function where the constants of the equation are made to vary with base current I/sub b/. Allowances for the non uniform gain of the device are also included. The model gives good agreement between measured and modelled dc characteristics, s-parameters and power transfer characteristics. This model can be implemented on most up to date CAD packages, and has been generated over a range of devices.

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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