系统和随机过程变化的同时模拟

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI:10.1109/SISPAD.2014.6931620

J. Lorenz, E. Bar, A. Burenkov, P. Evanschitzky, A. Asenov, L. Wang, X. Wang, A. Brown, C. Millar, D. Reid

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引用次数: 8

摘要

提出并演示了一种有效的方法，该方法可以同时模拟由物质粒度引起的多种工艺变化来源的影响，从设备引起的到随机的。自己的软件与第三方工具相结合，建立了从设备到电路级的分层仿真序列。由于某些可变性源影响不同的设备和不同的设备数量而产生的相关性可以进行严格的研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simultaneous simulation of systematic and stochastic process variations

An efficient approach is presented and demonstrated which enables the simultaneous simulation of the impact of several sources of process variations, ranging from equipment-induced to stochastic ones, which are caused by the granularity of matter. Own software is combined with third-party tools to establish a hierarchical simulation sequence from equipment to circuit level. Correlations which occur because some sources of variability affect different devices and different device quantities can be rigorously studied.

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来源期刊

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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