{"title":"多指CMOS射频放大器的稳定性分析","authors":"Sakib Reza, A. Roy","doi":"10.1109/ICIET48527.2019.9290681","DOIUrl":null,"url":null,"abstract":"Stability analysis is an important criterion which should be assessed at the starting of an amplifier design. In this paper, a graphical method is proposed to make a perfect trade-off between stability and noise figure (NF) when bias voltages and transistor sizes are evaluated. A single stage amplifier operating at 1 GHz is designed with Keysight’s Advanced Design System (ADS) in 0.18 um CMOS process to justify the validity of the proposed method.","PeriodicalId":427838,"journal":{"name":"2019 2nd International Conference on Innovation in Engineering and Technology (ICIET)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Stability Analysis of Multifinger CMOS RF Amplifiers\",\"authors\":\"Sakib Reza, A. Roy\",\"doi\":\"10.1109/ICIET48527.2019.9290681\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Stability analysis is an important criterion which should be assessed at the starting of an amplifier design. In this paper, a graphical method is proposed to make a perfect trade-off between stability and noise figure (NF) when bias voltages and transistor sizes are evaluated. A single stage amplifier operating at 1 GHz is designed with Keysight’s Advanced Design System (ADS) in 0.18 um CMOS process to justify the validity of the proposed method.\",\"PeriodicalId\":427838,\"journal\":{\"name\":\"2019 2nd International Conference on Innovation in Engineering and Technology (ICIET)\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 2nd International Conference on Innovation in Engineering and Technology (ICIET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIET48527.2019.9290681\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 2nd International Conference on Innovation in Engineering and Technology (ICIET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIET48527.2019.9290681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
稳定性分析是一个重要的标准,应该在放大器设计开始时进行评估。本文提出了一种图形化的方法,在评估偏置电压和晶体管尺寸时,在稳定性和噪声系数(NF)之间做出完美的权衡。在0.18 um CMOS工艺中,采用是德科技的先进设计系统(ADS)设计了工作在1 GHz的单级放大器,以证明所提出方法的有效性。
Stability Analysis of Multifinger CMOS RF Amplifiers
Stability analysis is an important criterion which should be assessed at the starting of an amplifier design. In this paper, a graphical method is proposed to make a perfect trade-off between stability and noise figure (NF) when bias voltages and transistor sizes are evaluated. A single stage amplifier operating at 1 GHz is designed with Keysight’s Advanced Design System (ADS) in 0.18 um CMOS process to justify the validity of the proposed method.