多指CMOS射频放大器的稳定性分析

Sakib Reza, A. Roy
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引用次数: 0

摘要

稳定性分析是一个重要的标准,应该在放大器设计开始时进行评估。本文提出了一种图形化的方法,在评估偏置电压和晶体管尺寸时,在稳定性和噪声系数(NF)之间做出完美的权衡。在0.18 um CMOS工艺中,采用是德科技的先进设计系统(ADS)设计了工作在1 GHz的单级放大器,以证明所提出方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Stability Analysis of Multifinger CMOS RF Amplifiers
Stability analysis is an important criterion which should be assessed at the starting of an amplifier design. In this paper, a graphical method is proposed to make a perfect trade-off between stability and noise figure (NF) when bias voltages and transistor sizes are evaluated. A single stage amplifier operating at 1 GHz is designed with Keysight’s Advanced Design System (ADS) in 0.18 um CMOS process to justify the validity of the proposed method.
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