半导体气体传感器神经网络模型的研制

O. Bondar’, E. O. Brezhneva, K. Andreev, N. V. Polyakov
{"title":"半导体气体传感器神经网络模型的研制","authors":"O. Bondar’, E. O. Brezhneva, K. Andreev, N. V. Polyakov","doi":"10.21869/2223-1560-2021-25-2-123-139","DOIUrl":null,"url":null,"abstract":"Purpose of research: Development of a neural model of a semiconductor gas sensor in order to generate data for training an information-processing device of gas analyzers based on artificial neural networks (ANN). Search and optimization of cleaning data composition and volume. The neural model of the sensor should take into account the influence of those factors on the signal, the fluctuations of which make the maximum contribution to the measurement errors. Testing of the model based on semiconductor carbon monoxide and hydrogen sensors.Methods. Methods of computer modeling, numerical methods, theory of neural networks. To compare the simulation results and the responses of real sensors, the relative error and standard deviation were determined.Results. Studies of various structures of the neural model of a semiconductor sensor have been carried out, the structure of a multilayer neural network of direct propagation for two semiconductor carbon monoxide and hydrogen sensors has been selected, modeling errors have been estimated, recommendations have been given for choosing the optimal structure and the amount of training data.Conclusion. Neural models of semiconductor carbon monoxide and hydrogen sensors have been obtained, conclusions have been drawn about the possibility of using this ANN structure in solving typical problems. Based on the analysis of the errors obtained, the effectiveness of using neural models of sensors to generate training data has been shown. The maximum relative error of modeling the TGS2442 semiconductor carbon monoxide sensor did not exceed 5% for the main characteristic and 2% for additional ones. The maximum relative error of modeling of the TGS2442 semiconductor hydrogen sensor did not exceed 3% for the main characteristic and 1% for additional ones.","PeriodicalId":443878,"journal":{"name":"Proceedings of the Southwest State University","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of a Neural Model of a Semiconductor Gas Sensor\",\"authors\":\"O. Bondar’, E. O. Brezhneva, K. Andreev, N. V. Polyakov\",\"doi\":\"10.21869/2223-1560-2021-25-2-123-139\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Purpose of research: Development of a neural model of a semiconductor gas sensor in order to generate data for training an information-processing device of gas analyzers based on artificial neural networks (ANN). Search and optimization of cleaning data composition and volume. The neural model of the sensor should take into account the influence of those factors on the signal, the fluctuations of which make the maximum contribution to the measurement errors. Testing of the model based on semiconductor carbon monoxide and hydrogen sensors.Methods. Methods of computer modeling, numerical methods, theory of neural networks. To compare the simulation results and the responses of real sensors, the relative error and standard deviation were determined.Results. Studies of various structures of the neural model of a semiconductor sensor have been carried out, the structure of a multilayer neural network of direct propagation for two semiconductor carbon monoxide and hydrogen sensors has been selected, modeling errors have been estimated, recommendations have been given for choosing the optimal structure and the amount of training data.Conclusion. Neural models of semiconductor carbon monoxide and hydrogen sensors have been obtained, conclusions have been drawn about the possibility of using this ANN structure in solving typical problems. Based on the analysis of the errors obtained, the effectiveness of using neural models of sensors to generate training data has been shown. The maximum relative error of modeling the TGS2442 semiconductor carbon monoxide sensor did not exceed 5% for the main characteristic and 2% for additional ones. The maximum relative error of modeling of the TGS2442 semiconductor hydrogen sensor did not exceed 3% for the main characteristic and 1% for additional ones.\",\"PeriodicalId\":443878,\"journal\":{\"name\":\"Proceedings of the Southwest State University\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-08-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Southwest State University\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21869/2223-1560-2021-25-2-123-139\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Southwest State University","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21869/2223-1560-2021-25-2-123-139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

研究目的:开发半导体气体传感器的神经模型,为训练基于人工神经网络(ANN)的气体分析仪信息处理装置生成数据。查找和优化清洗数据的组成和数量。传感器的神经模型应考虑这些因素对信号的影响,这些因素的波动对测量误差的贡献最大。基于半导体一氧化碳和氢气传感器的模型测试。计算机建模方法,数值方法,神经网络理论。为了将仿真结果与实际传感器的响应进行比较,确定了相对误差和标准偏差。对半导体传感器神经网络模型的各种结构进行了研究,选择了两个半导体一氧化碳和氢传感器的直接传播多层神经网络结构,估计了建模误差,给出了选择最优结构和训练数据量的建议。建立了半导体一氧化碳和氢气传感器的神经网络模型,并得出了用这种神经网络结构解决典型问题的可能性。通过对误差的分析,证明了利用传感器神经模型生成训练数据的有效性。TGS2442半导体一氧化碳传感器建模的最大相对误差主要特性不超过5%,附加特性不超过2%。TGS2442半导体氢传感器建模的最大相对误差主要特性不超过3%,附加特性不超过1%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of a Neural Model of a Semiconductor Gas Sensor
Purpose of research: Development of a neural model of a semiconductor gas sensor in order to generate data for training an information-processing device of gas analyzers based on artificial neural networks (ANN). Search and optimization of cleaning data composition and volume. The neural model of the sensor should take into account the influence of those factors on the signal, the fluctuations of which make the maximum contribution to the measurement errors. Testing of the model based on semiconductor carbon monoxide and hydrogen sensors.Methods. Methods of computer modeling, numerical methods, theory of neural networks. To compare the simulation results and the responses of real sensors, the relative error and standard deviation were determined.Results. Studies of various structures of the neural model of a semiconductor sensor have been carried out, the structure of a multilayer neural network of direct propagation for two semiconductor carbon monoxide and hydrogen sensors has been selected, modeling errors have been estimated, recommendations have been given for choosing the optimal structure and the amount of training data.Conclusion. Neural models of semiconductor carbon monoxide and hydrogen sensors have been obtained, conclusions have been drawn about the possibility of using this ANN structure in solving typical problems. Based on the analysis of the errors obtained, the effectiveness of using neural models of sensors to generate training data has been shown. The maximum relative error of modeling the TGS2442 semiconductor carbon monoxide sensor did not exceed 5% for the main characteristic and 2% for additional ones. The maximum relative error of modeling of the TGS2442 semiconductor hydrogen sensor did not exceed 3% for the main characteristic and 1% for additional ones.
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