L. Hernández, A. Claudio, M. Cotorogea, J. Macedonio
{"title":"概述最近的功率半导体器件及其仿真","authors":"L. Hernández, A. Claudio, M. Cotorogea, J. Macedonio","doi":"10.1109/CIEP.2006.312152","DOIUrl":null,"url":null,"abstract":"Currently, power electronics designers ask for more precise power semiconductor device models. Models based on semiconductor physics offer a better option to accomplish these requirements. Other aspect is the availability of parameter extraction methods which frequently is complicated. This paper proposes a study of parameter extraction methods for semiconductor device models. From this analysis an automatic system for semiconductor devices characterization of parameter extraction is proposed","PeriodicalId":131301,"journal":{"name":"2006 IEEE International Power Electronics Congress","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An overview of recent power semiconductor devices and their simulation\",\"authors\":\"L. Hernández, A. Claudio, M. Cotorogea, J. Macedonio\",\"doi\":\"10.1109/CIEP.2006.312152\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Currently, power electronics designers ask for more precise power semiconductor device models. Models based on semiconductor physics offer a better option to accomplish these requirements. Other aspect is the availability of parameter extraction methods which frequently is complicated. This paper proposes a study of parameter extraction methods for semiconductor device models. From this analysis an automatic system for semiconductor devices characterization of parameter extraction is proposed\",\"PeriodicalId\":131301,\"journal\":{\"name\":\"2006 IEEE International Power Electronics Congress\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Power Electronics Congress\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CIEP.2006.312152\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Power Electronics Congress","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIEP.2006.312152","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An overview of recent power semiconductor devices and their simulation
Currently, power electronics designers ask for more precise power semiconductor device models. Models based on semiconductor physics offer a better option to accomplish these requirements. Other aspect is the availability of parameter extraction methods which frequently is complicated. This paper proposes a study of parameter extraction methods for semiconductor device models. From this analysis an automatic system for semiconductor devices characterization of parameter extraction is proposed