{"title":"38GHz 27dBm功率放大器的增强模式GaAs PHEMT技术","authors":"Hamed Alsuraisry, Teng-Yuan Chang, Jeng‐Han Tsai, Tian-Wei Huang","doi":"10.1109/GSMM.2017.7970328","DOIUrl":null,"url":null,"abstract":"This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 µm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (Psat) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28% under 4V supply voltage. This chip occupies an area of 3.75 mm2.","PeriodicalId":414423,"journal":{"name":"2017 10th Global Symposium on Millimeter-Waves","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology\",\"authors\":\"Hamed Alsuraisry, Teng-Yuan Chang, Jeng‐Han Tsai, Tian-Wei Huang\",\"doi\":\"10.1109/GSMM.2017.7970328\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 µm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (Psat) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28% under 4V supply voltage. This chip occupies an area of 3.75 mm2.\",\"PeriodicalId\":414423,\"journal\":{\"name\":\"2017 10th Global Symposium on Millimeter-Waves\",\"volume\":\"2013 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 10th Global Symposium on Millimeter-Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GSMM.2017.7970328\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 10th Global Symposium on Millimeter-Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GSMM.2017.7970328","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology
This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 µm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (Psat) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28% under 4V supply voltage. This chip occupies an area of 3.75 mm2.
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