{"title":"基于硅直接键合技术的全耗尽埋藏沟道SOI MOSFET中扭结效应的消除","authors":"Q. Tong, X.-L. Xu, H.-Z. Zhang","doi":"10.1109/SOSSOI.1990.145728","DOIUrl":null,"url":null,"abstract":"A new SOI fully depleted buried channel MOSFET (FD BCMOS) has been developed which is different from conventional surface buried channel MOS devices in which a pn junction exists at the channel surface. Moreover, the pn junction is totally eliminated in the device structure. Numerical simulation and practical fabrication have demonstrated that no kink effect is seen and the device has excellent performance for VLSI applications due to the absence of the pn junction and superior material quality prepared by silicon wafer direct bonding technology.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Elimination of kink effect in fully depleted buried channel SOI MOSFET based on silicon direct bonding technology\",\"authors\":\"Q. Tong, X.-L. Xu, H.-Z. Zhang\",\"doi\":\"10.1109/SOSSOI.1990.145728\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new SOI fully depleted buried channel MOSFET (FD BCMOS) has been developed which is different from conventional surface buried channel MOS devices in which a pn junction exists at the channel surface. Moreover, the pn junction is totally eliminated in the device structure. Numerical simulation and practical fabrication have demonstrated that no kink effect is seen and the device has excellent performance for VLSI applications due to the absence of the pn junction and superior material quality prepared by silicon wafer direct bonding technology.<<ETX>>\",\"PeriodicalId\":344373,\"journal\":{\"name\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOSSOI.1990.145728\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145728","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Elimination of kink effect in fully depleted buried channel SOI MOSFET based on silicon direct bonding technology
A new SOI fully depleted buried channel MOSFET (FD BCMOS) has been developed which is different from conventional surface buried channel MOS devices in which a pn junction exists at the channel surface. Moreover, the pn junction is totally eliminated in the device structure. Numerical simulation and practical fabrication have demonstrated that no kink effect is seen and the device has excellent performance for VLSI applications due to the absence of the pn junction and superior material quality prepared by silicon wafer direct bonding technology.<>
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