{"title":"栅极关断晶闸管的SPICE模型","authors":"J. Schwartzenberg, C.L. Tsay, R. Fischl","doi":"10.1109/NAPS.1990.151366","DOIUrl":null,"url":null,"abstract":"The authors present a SPICE gate turn-off thyristor (GTO) model which simulates both the static negative differential resistance characteristics and the dynamic switching characteristics. The model consists of a parallel connection of two-transistors, three-resistor (2T-3R) cells. The accuracy of the model depends on the number of 2T-3R cells used. This multi-cell GTO model enables one to simulate the static-type negative differential resistance (NDR) I-V characteristics and the switching characteristics of the GTO with a high degree of accuracy. The experimental validation test shows that two parallel 2T-3R cells simulate the switching characteristics of the GTO accurately. A sensitivity study of the SPICE model performance with respect to the model parameters is used to develop the model synthesis procedure.<<ETX>>","PeriodicalId":330083,"journal":{"name":"Proceedings of the Twenty-Second Annual North American Power Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A SPICE model for gate turn-off thyristors\",\"authors\":\"J. Schwartzenberg, C.L. Tsay, R. Fischl\",\"doi\":\"10.1109/NAPS.1990.151366\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors present a SPICE gate turn-off thyristor (GTO) model which simulates both the static negative differential resistance characteristics and the dynamic switching characteristics. The model consists of a parallel connection of two-transistors, three-resistor (2T-3R) cells. The accuracy of the model depends on the number of 2T-3R cells used. This multi-cell GTO model enables one to simulate the static-type negative differential resistance (NDR) I-V characteristics and the switching characteristics of the GTO with a high degree of accuracy. The experimental validation test shows that two parallel 2T-3R cells simulate the switching characteristics of the GTO accurately. A sensitivity study of the SPICE model performance with respect to the model parameters is used to develop the model synthesis procedure.<<ETX>>\",\"PeriodicalId\":330083,\"journal\":{\"name\":\"Proceedings of the Twenty-Second Annual North American Power Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Twenty-Second Annual North American Power Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NAPS.1990.151366\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Twenty-Second Annual North American Power Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAPS.1990.151366","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The authors present a SPICE gate turn-off thyristor (GTO) model which simulates both the static negative differential resistance characteristics and the dynamic switching characteristics. The model consists of a parallel connection of two-transistors, three-resistor (2T-3R) cells. The accuracy of the model depends on the number of 2T-3R cells used. This multi-cell GTO model enables one to simulate the static-type negative differential resistance (NDR) I-V characteristics and the switching characteristics of the GTO with a high degree of accuracy. The experimental validation test shows that two parallel 2T-3R cells simulate the switching characteristics of the GTO accurately. A sensitivity study of the SPICE model performance with respect to the model parameters is used to develop the model synthesis procedure.<>
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