基于45nm SOI技术的宽带低噪声放大器设计

2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT) Pub Date : 2021-09-13 DOI:10.1109/ucmmt53364.2021.9569903

Guanqin Guo, Cheng Zhang, Wenlong He, Xi Zhu

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引用次数: 1

摘要

本文提出了一种最小噪声系数为2.8 dB的28-38 GHz宽带低噪声放大器。放大器由两级级联设计组成。通过使用变压器电路作为匹配网络，LNA实现了宽带性能。该LNA采用45 nm CMOS SOI技术设计，最大电压增益为20 dB，最大功率增益为23 dB, 3dB带宽为28-38 GHz，噪声系数小于3.8 dB。电源电压为1.5V时，直流功耗仅为20 mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of Broadband Low-Noise Amplifier in 45-nm SOI Technology

This paper presents a 28–38 GHz wideband low-noise amplifier (LNA) with minimum noise figure of 2.8 dB. The amplifier consists of a two-stage cascade design. By using a transformer circuit as its matching network, the LNA achieved a wideband performance. The LNA was designed in 45 nm CMOS SOI technology, achieving a maximum voltage gain of 20 dB and a maximum power gain of 23 dB with a 3dB bandwidth of 28–38 GHz, and a noise figure less than 3.8 dB in the band. At a supply voltage of 1.5V, the DC power consumption was only 20 mW.

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2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)

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