用于SiGe BiCMOS技术的生物医学传感器读出的62 GHz反射计

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2012-03-01 DOI:10.1109/SIRF.2012.6160125

B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, R. Weigel

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引用次数: 15

摘要

本文介绍了一种用于62 GHz传感器读出的SiGe BiCMOS集成反射计。该电路包括一个振荡器、一个六端口反射计和一个用于验证目的的虚拟传感器。该电路的中心频率为62 GHz，带宽为8GHz。它在3.75V的供电电压下运行，消耗282兆瓦。演示了测量原理，并将虚拟传感器的散射参数与市售矢量网络分析仪对断路的测量进行了比较。该电路采用190 ghz SiGe:C BiCMOS技术制造，占地面积为0.9 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 62 GHz reflectometer for biomedical sensor readout in SiGe BiCMOS technology

In this publication an integrated reflectometer in SiGe BiCMOS technology for sensor readout at 62 GHz is presented. The circuit includes an oscillator, a six-port reflectometer, and a dummy sensor for verification purposes. The circuit has a bandwidth of 8GHz at a center frequency of 62 GHz. It operates at 3.75V supply voltage and consumes 282 mW. The measurement principle is demonstrated and the scattering parameters of the dummy sensor are compared to measurement of a breakout circuit with a commercially available vector network analyzer. The circuit has been fabricated in a 190-GHz SiGe:C BiCMOS technology and occupies an area of 0.9 mm2.

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2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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