in / c掺杂GaInP-GaAs HBTs中基极电流的早期变化

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1900-01-01 DOI:10.1109/RELPHY.1998.670450

M. Borgarino, R. Plana, S. Delage, H. Blanck, F. Fantini, J. Graffeuil

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引用次数: 4

摘要

本文报道了在室温和不同偏置条件下，对SiN钝化、双台面加工、in / c掺杂的GaInP-GaAs HBTs器件施加应力所引起的基极电流(烧蚀效应)的早期变化。在250 Hz-100 kHz的频率范围内，通过直流测量和低频噪声分析进行了调查。结果表明，烧蚀效应是由于在发射极周长周围的外源基区表面复合电流的减少。表面复合电流的减少是由于在应力过程中基材层中C-H配合物上脱落的氢原子钝化了钝化/半导体界面上的缺陷。

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Early variations of the base current in In/C-doped GaInP-GaAs HBTs

This paper reports on the early variations of the base current (burn-in effect) in SiN passivated, double-mesa processed, In/C-doped GaInP-GaAs HBTs induced by stressing the devices at room temperature and under different bias conditions. The investigation was carried out by means of DC measurements and low frequency noise analysis, in the 250 Hz-100 kHz frequency range. The results demonstrated that the burn-in effect is due to a reduction of surface recombination currents in the extrinsic base region around the emitter perimeter. This reduction in surface recombination current is attributed to the passivation of defects at the passivation/semiconductor interface by hydrogen atoms debonded from C-H complexes in the base layer during the stress.

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来源期刊

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

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