用于SAW和UV光电探测器制造的GaN/硅的微加工和纳米加工

CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI:10.1109/SMICND.2010.5650290

A. Muller, G. Konstantinidis, D. Neculoiu, A. Dinescu, M. Andrulidaki, A. Stavrinidis, A. Cismaru, A. Stefanescu, M. Carp, C. Anton, A. Muller, R. Gavrila, D. Dascalu

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摘要

本文介绍了两种新型GaN/Si器件的制备和表征。第一个器件是GHz频率范围的SAW结构，使用GaN上的纳米光刻技术制造。在单个金属PMMA层中成功地开发了间距为300nm的手指和手指间。已获得接近4ghz的工作频率。第二种器件是氮化镓上的膜支撑MSM紫外光电探测器，采用了微加工技术和纳米光刻技术。MSM交叉指状结构的光电探测器具有500nm宽指间距。获得了非常高的响应率(6V时约为10 A/W)和非常低的暗电流(V=3V时<1pA)。

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Micromachining and nanoprocessing of GaN/Silicon for SAW and UV photodetector manufacturing

The paper presents the manufacturing and the characterization of two novel devices on GaN/Si. The first device is a SAW structure for the GHz frequency range manufactured using nanolithografic techniques on GaN. Fingers and intedigits spacing 300nm wide have been successful developed in a single metal PMMA layer. An operating frequency close to 4 GHz has been obtained. For the second device, a membrane supported MSM UV photodetector on GaN, both micromachining techniques and nanolithography have been used. The MSM interdigitated structure of the photodetector had 500nm wide fingers/spacings. A very high responsivity (about 10 A/W for 6V) and the very low dark current (<1pA for V=3V) have been obtained.

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CAS 2010 Proceedings (International Semiconductor Conference)

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