High-performance solution-processed thin-film transistors using fluorine-doped aqueous metal oxides

Simple and facile solution-processed oxide thin-film transistors (TFTs) using metal-oxide semiconductors are very promising for producing large-area electronics at a relatively low cost. This study aims to design and fabricate high-performance solution-processed TFTs using fluorine-doped aqueous metal oxides at a low temperature of 300°C. We investigated the effect of a simple method of doping the IGZO and IZO used for the active-channel layer with fluorine additives on the performance of the fabricated TFT. In addition, the hydrogen injection and oxidation method, which is considered effective for film densification, was tested and found to improve the electrical performance of the TFT. This simple, low-temperature fabrication technique will be useful for manufacturing large-area TFTs.