减小大面积硅PIN微带传感器漏电流的研究——防止植入损伤的方法

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496420

Wen-Chin Tsay, Yen-Ann Chen, Jyh-Wong Hong, A. Chen, W. Lin, Y.H. Chang, S. Hou, S. Hsu, C.R. Li, Hsien-Jen Ting, Song-Tsang Chiang

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引用次数: 0

摘要

利用平面技术制备了几种具有电容耦合和多晶硅偏置电阻的8/spl倍/4 cm/sup / 2/单面硅微带传感器。Sirtl腐蚀分析表明，泄漏电流是由植入损伤引起的。开发了硼固体源预沉积工艺，以取代p/sup +/带状注入工艺。研究了几种消除注入损伤的退火工艺。原型传感器已经在欧洲核子研究中心SPS区域进行了测试。测试结果表明，该传感器是可行的。

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Studies on reducing leakage current of large-area silicon PIN microstrip sensors-methods to prevent implantation damage

Several 8/spl times/4 cm/sup 2/ single-sided silicon microstrip sensors with capacitor coupling and polysilicon bias resistors have been fabricated by using planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process has been developed to replace the p/sup +/ strip implantation. Several anneal technologies have been studied to remove the implantation damge. The prototype sensors have been tested at the CERN SPS area. Test results showed that such a sensor is feasible.

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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