用于增强光开关特性的透明三层氧化TFT

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI:10.23919/AM-FPD.2018.8437364

Jongchan Lee, Jaehyun Moon, JaeEun Pi, S. Cho, Hee‐Ok Kim, Himchan Oh, Chi-Sun Hwang, Seong-Deok Ahn, Seung-Youl Kang, K. Kwon

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引用次数: 1

摘要

研究了三层通道结构的铝掺杂铟锌锡氧化物(Al-IZTO) /铟锌氧化物(IZO) / Al-IZTO透明薄膜晶体管，以抑制持久性光电导率(PPC)。TFT为顶栅、底接触结构。Al-IZTO三层具有高迁移率(μ sat)为32 2 cm2/Vs, Vth为- 4V，亚阈值摆幅为260 mV/dec。我们对Al-IZTO三层TFT施加10 μs的正栅脉冲，PPC在55 ms的短时间内收缩。我们的TFT方案可以很容易地应用于光电TFT，其中需要稳定的操作和电操作的PPC。

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Transparent triple-layer oxide TFT for enhanced photo switching characteristics

We studied transparent thin film transistors with a triple-layer channel structure of aluminium-doped indium zinc tin oxide (Al-IZTO) / indium zinc oxide (IZO) / Al-IZTO to suppress the persistent photoconductivity (PPC). The TFT was fabricated top-gate, bottom-contact structure. The characteristics of Al-IZTO triple-layer exhibited high mobility (μ sat) of3 2 cm2/Vs, Vth of −4V, and sub-threshold swing of 260 mV/dec. We applied a positive gate pulse to Al-IZTO triple-layer TFT and the PPC was shrunk in a short time span of 55 ms with 10 μs gate pulse. Our TFT scheme can be readily applied as photo TFTs where stable operation and electrical manipulations of PPC are desired.

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2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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