掺铜PbTiO3和PbZr0.52 Ti0.48O3铁电薄膜的红外反射率研究

R. Hovsepyan, E. Kafadaryan, E. Vardanyan, S. Grigoryan, R. Vardanyan, A. L. Manukyan
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引用次数: 0

摘要

采用0.1、0.5、1.0 mas Cu掺杂制备了不同空穴浓度的PbTiO3单晶c轴取向薄膜。用Zr代替Ti (Zr:Ti = 52:48)。我们报告了这些化合物的浓度依赖的远红外和中红外反射率光谱,重点是电子性质。用Kramers-Kronig变换分析了室温下200 ~ 10000 cm-1频率范围内的光学函数ε 1、ε 2、σ、- im ε -1的反射率。电导率谱表现出完全的半导体依赖性,可以用德鲁德-洛伦兹模型和动态相互作用来分析,这导致了频率依赖性散射率和低频载流子质量提高0.5 mas。与未掺杂的样品相比,含Cu的PbTiO3在200 cm-1附近的有效质量从3.5降低到1.5,弛豫时间增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Infrared reflectivity study of Cu-doped PbTiO3 and PbZr0.52 Ti0.48O3 ferroelectric thin films
Monocrystalline c-axis oriented thin films of PbTiO3 with various hole concentration were prepared by Cu doping with 0.1, 0.5, 1.0 mas.% and substituting Zr for Ti (Zr:Ti equals 52:48). We report concentration-dependent far- and mid- infrared reflectivity spectra of these compounds focusing on the electronic properties. Optical functions (ε 1, ε 2, σ , -Im ε -1) have been analyzed by Kramers-Kronig transformation to reflectivity spectra measured in a frequency range of 200 - 10000 cm-1 at room temperature. Conductivity spectra show a complete semiconducting dependence that can be analyzed by Drude-Lorentz model and in the terms of dynamic interaction, which leads to a frequency dependent scattering rate and enhanced low-frequency carrier mass 0.5 mas.% Cu in PbTiO3 decreases effective mass from 3.5 to 1.5 near 200 cm-1 and increases relaxation time as compared with the undoped sample.
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